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IXFL32N120P
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
ISOPLUS i5-Pak TM (IXFL) Outline
g fs
C iss
C oss
C rss
R Gi
V DS = 20V, I D = 16A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Gate input resistance
17
29
21
1105
77
0.84
S
nF
pF
pF
Ω
t d(on)
t r
t d(off)
t f
Q g(on)
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 16A
R G = 1 Ω (External)
70
62
88
51
360
ns
ns
ns
ns
nC
SYM
A
PIN 1 = Gate
PIN 2 = Source
PIN 3 = Drain
Tap 4 = Electricall isolated 2500V
INCHES MILLIMETER
MIN MAX MIN MAX
0.190 0.205 4.83 5.21
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 0.5 ? V DSS , I D = 16A
130
160
0.15
nC
nC
0.24 °C/W
°C/W
A1
A2
b
b1
b2
c
0.102
0.046
0.045
0.063
0.058
0.020
0.118
0.055
0.055
0.072
0.068
0.029
2.59
1.17
1.14
1.60
1.47
0.51
3.00
1.40
1.40
1.83
1.73
0.74
D
E
1.020
0.770
1.040
0.799
25.91
19.56
26.42
20.29
Source-Drain Diode
T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
e
e1
L
L1
0.150 BSC
0.450 BSC
0.780 0.820
0.080 0.102
3.81 BSC
11.43 BSC
19.81 20.83
2.03 2.59
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
32
128
1.5
A
A
V
Q
Q1
R
R1
S
0.210
0.490
0.150
0.100
0.668
0.235
0.513
0.180
0.130
0.690
5.33
12.45
3.81
2.54
16.97
5.97
13.03
4.57
3.30
17.53
t rr
Q RM
I RM
I F = 25A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
1.9
15.0
300 ns
μ C
A
T
U
0.801
0.065
0.821
0.080
20.34
1.65
20.85
2.03
Notes:
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Ices measurement.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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